Preliminary reliability at 50 V of state-of-the-art RF power GaN-on-Si HEMTs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 195-196

  Medjdoub, F ^a   Marcon, D ^a   Das, J ^a   Derluyn, J ^a   Cheng, K ^a   Degroote, S ^a   Germain, M ^a   Decoutere, S ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; CHANNEL TEMPERATURE; COST-EFFECTIVE TECHNOLOGY; DEVICE STABILITY; DRAIN VOLTAGE; HIGH ELECTRIC FIELDS; HIGH RELIABILITY; IN-SITU; OUTPUT POWER DENSITY; RF-POWER;

ELECTRIC FIELDS; GALLIUM ALLOYS; SILICON; SILICON NITRIDE;

GALLIUM NITRIDE;

EID: 77957598975     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551904     Document Type: Conference Paper

References (2)

1. W. Liu et al, J. of Appl. Phys. 97, 073710, 2005.
2. P. Ivo et al, IEEE Int. Reliability Phys. Symp., pp. 71-75, 2009.