Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Lorenz, Anne ^a,b   Derluyn, Joff ^b   Das, Jo ^b   Cheng, Kai ^a,b   Degroote, Stefan ^b   Medjdoub, Farid ^b   Germain, Marianne ^b   Borghs, Gustaaf ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CIRCUIT DESIGNS; CURRENT COLLAPSE; DEEP LEVEL TRAP; DEPLETION MODES; ENHANCEMENT MODES; FLUORINE IONS; HIGH ELECTRON MOBILITY; HIGH FREQUENCY; NEGATIVE BIAS; NEGATIVE VALUES; ON CURRENTS; OPERATION MODE; POSITIVE VALUE; POWER CONSUMPTION; THERMAL ANNEALS;

ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; FLUORINE; GALLIUM ALLOYS; GALLIUM NITRIDE; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 75749108477     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880838     Document Type: Article

References (7)

1. Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, IEEE Trans. Electron Devices 53, 2207 (2006).
2. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura, IEEE Trans. Electron Devices 53, 356 (2006).
3. M. Higashiwaki, T. Mimura, and T. Matsui, IEEE Trans. Electron Devices 54, 1566 (2007).
4. F. Medjdoub, M. Alomari, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, C. Gaquière, N. Grandjean, and E. Kohn, Electron. Lett. 44, 696 (2008).
5. T. Palacios, C.-S. Suh, A. Chakraborty, S. Keller, S. P. Den-Baars, and U. K. Mishra, IEEE Electron Device Lett. 27, 428 (2006).
6. B. K. Li, K. J. Chen, K. M. Lau, W. K. Ge, and J. N. Wang, Phys. Status Solidi C 5, 1892 (2008).
7. K. Cheng, M. Leys, J. Derluyn, S. Degroote, D.P. Xiao, A. Lorenz, S. Boeykens, M. Germain, and G. Borghs, J. Cryst. Growth 298, 822 (2007).