Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Boyd, Adam R ^a   Degroote, Stefan ^b   Leys, Maarten ^b   Schulte, Frank ^a   Rockenfeller, Olaf ^a   Luenenbuerger, Markus ^a   Germain, Marianne ^b   Kaeppeler, Johannes ^a   Heuken, Michael ^a  

^a AIXTRON AG   (Germany)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN LAYERS; GROWTH OF GAN; IN-SITU; MOCVD; SILICON (111); SLIP LINES; WAFER TEMPERATURE PROFILE;

ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE CONTROL;

SILICON WAFERS;

EID: 77952731591     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880925     Document Type: Article

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