Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes

Thin Solid Films

Volumn 516, Issue 7, 2008, Pages 1529-1532

  Kim, Jong Hoon ^a   Ahn, Byung Du ^a   Lee, Choong Hee ^a   Jeon, Kyung Ah ^a   Kang, Hong Seong ^a   Lee, Sang Yeol ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GLASS; MAGNETRON SPUTTERING; OPACITY; PULSED LASER DEPOSITION; THRESHOLD VOLTAGE; ZINC OXIDE;

ENHANCEMENT MODE; FIELD EFFECT MOBILITY; GATE INSULATORS; TRANSPARENT ELECTRONICS;

THIN FILM TRANSISTORS;

EID: 38649124068     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.101     Document Type: Article

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