Annealing temperature dependent electrical and optical properties of ZnO and MgZnO films in hydrogen ambient

Applied Surface Science

Volumn 255, Issue 13-14, 2009, Pages 6745-6749

  Liu, Weiwei ^a,b   Yao, Bin ^a   Li, Yongfeng ^a,b   Li, Binghui ^a   Zheng, Changji ^a,b   Zhang, Bingye ^a,b   Shan, Chongxin ^a   Zhang, Zhenzhong ^a   Zhang, Jiying ^a   Shen, Dezhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Annealing; Electrical properties; Optical properties; Thin films

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; HYDROGEN; II-VI SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DOPING; THIN FILMS; ZINC OXIDE;

ANNEALING PROCESS; ANNEALING TEMPERATURES; C-PLANE SAPPHIRE SUBSTRATES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRON CONCENTRATION; HALL EFFECT MEASUREMENT; LUMINESCENCE BAND; SOLID SOLUBILITIES;

OPTICAL FILMS;

EID: 63449127902     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.03.001     Document Type: Article

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