Characteristics improvement of metalorganic chemical vapor deposition grown MgZnO films by MgO buffer layers

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1185-1189

  Kim, Dong Chan ^a   Kong, Bo Hyun ^a   Ahn, Cheol Hyoun ^a   Cho, Hyung Koun ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Luminescence; MOCVD; Optoelectronic devices; Zinc oxide

Indexed keywords

C-SAPPHIRE; CUBIC PHASE; ELECTRICAL PROPERTY; EPITAXIAL BEHAVIOR; HETEROSTRUCTURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MGO BUFFER LAYER; MGZNO THIN FILM; MOCVD; PREFERRED GROWTH; WURTZITES;

BUFFER LAYERS; CORUNDUM; CRYSTAL GROWTH; ELECTRIC PROPERTIES; ELECTROOPTICAL DEVICES; LATTICE MISMATCH; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE; ZINC SULFIDE;

EPITAXIAL LAYERS;

EID: 71649112210     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.233     Document Type: Article

References (25)

1. Fortunato E., Barquinha P., Primentel A., Goncalves A., Marques A., Pereira L., and Martins R. Adv. Mater. (Weinheim, Ger.) 17 (2005) 590
2. Hu G., Kumar B., Gong H., Chor E.F., and Wu P. Appl. Phys. Lett. 88 (2006) 101901
3. Koike K., Nakashima I., Hashimoto K., Sasa S., Inoue M., and Yano M. Appl. Phys. Lett. 87 (2005) 112106
4. Nomura K., Ohta H., Takagi A., Kamiya T., Hirano M., and Hosono H. Nature (London) 432 (2004) 488
5. Look D.C. Mater. Sci. Eng., B 80 (2001) 383
6. Yan Z., Zhou X.Y., Pang G.K.H., Zhang T., Liu W.L., Cheng J.G., Song Z.T., Feng S.L., Lai L.H., Chen J.Z., and Wang Y. Appl. Phys. Lett. 90 (2007) 143503
7. Makino T., Chia C.H., Tuan N.T., Sun H.D., Segawa Y., Kawasaki M., Ohtomo A., Tamura K., and Koinuma H. Appl. Phys. Lett. 77 (2000) 975
8. Gruber Th., Kirchner C., Kling R., Reuss F., and Waag A. Appl. Phys. Lett. 84 (2004) 5359
9. Zhang B.P., Binh N.T., Wakatsuki K., Liu C.Y., Segawa Y., and Usami N. Appl. Phys. Lett. 86 (2005) 032105
10. Sharma A.K., Narayan J., Muth J.F., Teng C.W., Jin C., Kvit A., Kolbas R.M., and Holland O.W. Appl. Phys. Lett. 75 (1999) 3327
11. Segnit E.R., and Holland A.E. J. Am. Ceram. Soc. 48 (1965) 412
12. Heitsch S., Zimmermann G., Fritsch D., Sturm C., Schmidt-Grund R., Schulz C., Hochmuth H., Spemann D., Benndorf G., Rheinländer B., Nobis Th., Lorenz M., and Grundmann M. J. Appl. Phys. 101 (2007) 083521
13. Tampo H., Shibata H., Maejima K., Yamada A., Matsubara K., Fons P., Niki S., Tainaka T., Chiba Y., and Kanie H. Appl. Phys. Lett. 91 (2007) 261907
14. Jeong S.-H., Kim I.-S., Kim S.-S., Kim J.-K., and Lee B.-T. J. Crystal Growth 264 (2004) 110
15. Vinnichenko M., Shevchenko N., Rogozin A., Grötzschel R., Mücklich A., Kolitsch A., and Möller W. J. Appl. Phys. 102 (2007) 113505
16. Fujita M., Sasajimab M., Deesirapipat Y., and Horikoshi Y. J. Crystal Growth 278 (2005) 293
17. Park J.S., Hong S.K., Minegishi T., Park S.H., Im I.H., Hanada T., Cho M.W., Yao T., Lee J.W., and Lee J.Y. Appl. Phys. Lett. 90 (2007) 201907
18. Zhang B.P., Binh N.T., Segawa Y., Wakatsuki K., and Usami N. Appl. Phys. Lett. 83 (2003) 1635
19. Park D.J., Lee J.Y., Kim D.C., Mohanta S.K., and Cho H.K. Appl. Phys. Lett. 91 (2007) 143115
20. Kato H., Miyamoto K., Sano M., and Yao T. Appl. Phys. Lett. 84 (2004) 4562
21. Ahn C.H., Kim Y.Y., Kim D.C., Mohanta S.K., and Cho H.K. J. Appl. Phys. 105 (2009) 013502
22. Jeong S.H., Kim B.S., and Lee B.T. Appl. Phys. Lett. 82 (2003) 2625
23. Setiawan A., Vashaei Z., Cho M.W., Yao T., Kato H., Sano M., Miyamoto K., Yonenaga I., and Ko H.J. J. Appl. Phys. 96 (2004) 3763
24. Cho M.W., Setiawan A., Ko H.J., Hong S.K., and Yao T. Semicond. Sci. Technol. 20 (2005) S13
25. Narayan J., and Larson B.C. J. Appl. Phys. 93 (2003) 278