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Journal of Electronic Materials

Volumn 38, Issue 9, 2009, Pages 1962-1968

Characterization of Zn 1-x Mg x O films prepared by the sol-gel process and their application for thin-film transistors

(3) Tsay, Chien Yie a Wang, Min Chi a Chiang, Shin Chuan b

a FENG CHIA UNIVERSITY (Taiwan)

b Taiwan TFT LCD Association (Taiwan)

Author keywords

Sol gel process; Thin film transistors; Transparent oxide semiconductors; Zn 1 x Mg x O

Indexed keywords

ACTIVE CHANNEL LAYERS; CRYSTALLINITIES; ENHANCEMENT MODES; FIELD-EFFECT MOBILITIES; MG CONTENT; ON/OFF RATIO; ROOT MEAN SQUARE ROUGHNESS; TRANSPARENT OXIDE SEMICONDUCTORS; TRANSPARENT SEMICONDUCTOR; VISIBLE RANGE; ZN 1-X MG X O; ZNO FILMS;

DRAIN CURRENT; ELECTRIC POTENTIAL; FILM PREPARATION; GELATION; GELS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTORESISTS; SEMICONDUCTING ORGANIC COMPOUNDS; SOL-GELS; SOLS; SURFACE ROUGHNESS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; ZINC; ZINC OXIDE;

SOL-GEL PROCESS;

EID: 68949142323 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0835-y Document Type: Article

Times cited : (15)

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