Ultraviolet photodetector based on MgxZn1-xO thin films deposited by radio frequency magnetron sputtering

IEEE Photonics Technology Letters

Volumn 20, Issue 24, 2008, Pages 2108-2110

  Lee, Hsin Ying ^a   Wang, Ming Yi ^b   Chang, Kuo Jen ^c   Lin, Wen Jen ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Metal semiconductor metal ultraviolet photodetectors (MSM UPDs); MgxZn1 xO; Radio frequency magnetron sputtering

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; MAGNETRON SPUTTERING; MAGNETRONS; METALS; OPTOELECTRONIC DEVICES; RADIO; RADIO WAVES; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC SULFIDE;

CUT-OFF WAVELENGTHS; HEXAGONAL WURTZITE STRUCTURES; METAL-SEMICONDUCTOR-METAL ULTRAVIOLET PHOTODETECTORS (MSM-UPDS); MG CONTENTS; MGXZN1-XO; OPTICAL BAND-GAP; RADIO FREQUENCY MAGNETRON SPUTTERING; REJECTION RATIOS;

PHOTODETECTORS;

EID: 59649087210     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2006914     Document Type: Article

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