Growth of high quality N-polar AlN (000 1-) on Si(111) by plasma assisted molecular beam epitaxy

Applied Physics Letters

Volumn 94, Issue 15, 2009, Pages

  Dasgupta, Sansaptak ^a   Wu, F ^a   Speck, J S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CONVERGENT-BEAM ELECTRON DIFFRACTIONS; CROSS SECTIONS; HIGH QUALITIES; KOH ETCHINGS; PLASMA ASSISTED MOLECULAR BEAM EPITAXIES; POLARITY INVERSIONS; PRE DEPOSITIONS; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONS; SI (1 1 1); SI ATOMS; SI(111) SUBSTRATES; TEM; X-RAY DIFFRACTION MEASUREMENTS;

ADATOMS; ALUMINUM; CRYSTAL GROWTH; DANGLING BONDS; ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; PLASMAS; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM WIRES; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65249187702     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3118593     Document Type: Article

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