Effect of III/V ratio of HT-AlN buffer layer on polarity selection and electrical quality of GaN films grown by radio frequency molecular beam epitaxy

Chinese Physics Letters

Volumn 24, Issue 1, 2007, Pages 240-243

  Zhong, Fei ^a   Qiu, Kai ^a   Li, Xin Hua ^a   Yin, Zhi Jun ^a   Xie, Xin Jian ^a   Wang, Yang ^a   Ji, Chang Jian ^a   Cao, Xian Cun ^a   Han, Qi Feng ^a   Chen, Jia Rong ^a   Wang, Yu Qi ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; GALLIUM NITRIDE; HALL MOBILITY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; WET ETCHING;

ALN BUFFER LAYERS; ELECTRICAL QUALITY; GAN FILM; GROWTH PROCESS; HIGHEST TEMPERATURE; RADIO FREQUENCY MOLECULAR BEAM EPITAXY; RADIO-FREQUENCY MOLECULAR BEAM EPITAXIES; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; SITU REFLECTION; WET-CHEMICAL ETCHING;

III-V SEMICONDUCTORS;

EID: 33947589868     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/1/065     Document Type: Article

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