A study on the failure mechanism of a phase-change memory in write/erase cycling

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 448-450

  Lee, Suyoun ^a   Jeong, Jeung Hyun ^a   Lee, Taek Sung ^a   Kim, Won Mok ^a   Cheong, Byung Ki ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

Cycling endurance; Phase change memory (PCM); Reliability

Indexed keywords

ACTIVE VOLUMES; BIAS POLARITY; CYCLING ENDURANCE; DEVICE CHARACTERISTICS; FAILURE MECHANISM; ION MIGRATION; LOW-RESISTANCE STATE; PHASE-CHANGE MEMORY (PCM); RESET CURRENTS;

DURABILITY; GERMANIUM; PULSE CODE MODULATION; SYSTEM THEORY; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 67349086445     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2015222     Document Type: Article

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