Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Lee, Suyoun ^a   Jeong, Jeung Hyun ^a   Lee, Taek Sung ^a   Kim, Won Mok ^a   Cheong, Byung Ki ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; GERMANIUM; HEALTH; METALLIZING; PHASE INTERFACES;

AMERICAN INSTITUTE OF PHYSICS (AIP); BIAS POLARITY; DENSITY OF TRAP STATES; ERASING TIME; MULTILEVEL STORAGE; NEGATIVE BIAS; PHASE CHANGES; POLARITY DEPENDENCES; POSITIVE BIAS; RESISTANCE STATES;

PHASE CHANGE MEMORY;

EID: 45849147380     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2945284     Document Type: Article

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