Evidence of crystallization-induced segregation in the phase change material Te-rich GST

Journal of the Electrochemical Society

Volumn 158, Issue 10, 2011, Pages

  Debunne, Anthony ^a   Virwani, Kumar ^a   Padilla, Alvaro ^a   Burr, Geoffrey W ^a   Kellock, Andrew J ^a   Deline, Vaughn R ^a   Shelby, Robert M ^a   Jackson, Bryan ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AUGER ANALYSIS; DEPOSITED FILMS; ELECTRICAL FIELD; ELEMENTAL SEGREGATION; LASER-INDUCED CRYSTALLIZATION; LOW TEMPERATURES; MATRIX; RAPID CRYSTALLIZATION;

CRYSTALLIZATION; ELECTRIC FIELDS; ELECTROMIGRATION; GERMANIUM; MATERIALS; SEGREGATION (METALLOGRAPHY); STOICHIOMETRY; TELLURIUM; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 80052084713     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3614508     Document Type: Article

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