Change of damage mechanism by the frequency of applied pulsed DC in the Ge2Sb2 Te5 line

Journal of the Electrochemical Society

Volumn 156, Issue 8, 2009, Pages

  Yang, Tae Youl ^a   Park, Il Mok ^a   You, Ha Young ^a   Oh, Seung Hwan ^a   Yi, Kyung Woo ^a   Joo, Young Chang ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL CHANGES; DAMAGE MECHANISM; DC STRESS; HIGHER FREQUENCIES; LINE STRUCTURES; PULSED DC;

DAMAGE DETECTION; FAILURE (MECHANICAL); GERMANIUM; TELLURIUM COMPOUNDS;

FATIGUE DAMAGE;

EID: 67650577069     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3137056     Document Type: Article

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