SCOPUS 정보 검색 플랫폼

Volumn 154, Issue 3, 2007, Pages

Phase-change behavior of stoichiometric Ge2Sb2Te 5 in phase-change random access memory

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; GRAIN GROWTH; PHASE SHIFT; SEMICONDUCTING GERMANIUM COMPOUNDS; STOICHIOMETRY;

DOME SHAPED STRUCTURE; PHASE CHANGE BEHAVIOR; RECRYSTALLIZED GRAIN; RESET STATE;

RANDOM ACCESS STORAGE;

EID: 33846954042 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2409482 Document Type: Article

Times cited : (101)

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