Self-ordering of misfit dislocation segments in epitaxial SiGe islands on Si(001)

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

  Boioli, F ^a   Zinovyev, V A ^b   Gatti, R ^a   Marzegalli, A ^a   Montalenti, F ^a   Stoffel, M ^c,d,e   Merdzhanova, T ^d,f   Wang, L ^c   Pezzoli, F ^c   Rastelli, A ^c   Schmidt, O G ^c   Miglio, Leo ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c IFW DRESDEN   (Germany)

^d MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^e INSTITUT JEAN LAMOUR   (France)

^f FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; IN SITU PROCESSING; TRANSMISSION ELECTRON MICROSCOPY;

CRITICAL CONDITION; DISLOCATION SEGMENTS; EPITAXIAL ISLANDS; ISLAND SHAPE; MEASUREMENTS OF; QUANTITATIVE PREDICTION; SELF ORDERING; SI SUBSTRATES;

SI-GE ALLOYS;

EID: 80052424962     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3611385     Document Type: Article

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