In situ transmission electron microscopy observations of the formation of self-assembled ge islands on Si

Microscopy Research and Technique

Volumn 42, Issue 4, 1998, Pages 281-294

  Ross, F M ^a   Tersoff, J ^a   Reuter, M ^a   Legoues, F K ^a   Tromp, R M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Island formation; Quantum dots; Self assembly; Semiconductor growth; Strained layer heteroepitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COARSENING; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

COARSENINGS; GE ISLAND; IN-SITU TRANSMISSION; IN-SITU TRANSMISSION ELECTRON MICROSCOPIES; ISLAND FORMATION; ISLAND SHAPE; QUANTUM DOT; STRAINED LAYER HETEROEPITAXY; STRAINED LAYERS; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

SELF ASSEMBLY;

ARTICLE; EXPERIMENTATION; MEDICAL TECHNOLOGY; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY; VIDEORECORDING;

EID: 0032528938     PISSN: 1059910X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1097-0029(19980915)42:4<281::AID-JEMT7>3.0.CO;2-T     Document Type: Article

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