Island motion triggered by the growth of strain-relaxed SiGe/Si(0 0 1) islands

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 319-323

  Merdzhanova, T ^a   Rastelli, A ^a   Stoffel, M ^a   Kiravittaya, S ^a   Schmidt, O G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

A1. Atomic force microscopy; A1. Etching; A1. Surface structure; A3. Molecular beam epitaxy; B1. Germanium silicon alloys

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; STRAIN RELAXATION;

GERMANIUM SILICON ALLOYS; PHENOMENOLOGICAL MODELS; SURFACE STRUCTURES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33947316892     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.137     Document Type: Article

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