Characterization of Si nanowires fabricated by Ga+ FIB implantation and subsequent selective wet etching

Journal of Micromechanics and Microengineering

Volumn 21, Issue 9, 2011, Pages

  Bottger R ^a   Bischoff, L ^a   Schmidt, B ^a   Krause, M ^a,b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT CURRENT; ELECTRICAL CURRENT FLOW; EXPERIMENTAL DATA; FLUENCES; IN-VACUUM; NUMERICAL MODELS; ORDERS OF MAGNITUDE; PARTIAL RECRYSTALLIZATION; PRIORI ESTIMATION; SELECTIVE WET ETCHING; SELF-HEATING; SI NANOWIRE; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; ELECTRIC CURRENTS; ION IMPLANTATION; NANOWIRES; RAMAN SPECTROSCOPY; RECRYSTALLIZATION (METALLURGY); SCANNING ELECTRON MICROSCOPY; WET ETCHING;

ELECTRIC WIRE;

EID: 80052203493     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/9/095025     Document Type: Article

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