Ga+ beam lithography for nanoscale silicon reactive ion etching

Nanotechnology

Volumn 21, Issue 24, 2010, Pages

  Henry, M D ^a,b   Shearn, M J ^a,b   Chhim, B ^a,b   Scherer, A ^a,b  

^a California Institute of Technology   (United States)

^b Kavli Nanoscience Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AREAL DENSITIES; DRY-ETCH; ETCH CHEMISTRY; ETCH DEPTH; ETCH MASK; GRAY-SCALE LITHOGRAPHY; HIGH ASPECT RATIO NANO-STRUCTURES; HIGH ASPECT RATIO STRUCTURES; HIGH FIDELITY; ICP-RIE; INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHER; MULTILAYER STRUCTURES; NANO SCALE; NANOSCALE STRUCTURE; PREFERENTIAL ETCHING; SILICON ETCH MASK; SILICON ETCHING; UNEVEN SURFACES;

ASPECT RATIO; ELECTROMAGNETIC INDUCTION; ELECTRON BEAM LITHOGRAPHY; FLUORINE; INDUCTIVELY COUPLED PLASMA; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTORESISTS; PRESSURE DROP;

REACTIVE ION ETCHING;

EID: 77952641539     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/24/245303     Document Type: Article

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