Nano-structures for sensors on SOI by writing FIB implantation and subsequent anisotropic wet chemical etching

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 8-9, 2009, Pages 1372-1375

  Bischoff, L ^a   Schmidt, B ^a   Lange, H ^a   Donzev, D ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b SIOS Messtechnik GmbH   (Germany)

Author keywords

3D nanostructures; Anisotropic wet chemical etching; Displacement; FIB implantation; Sensor

Indexed keywords

3D-NANOSTRUCTURES; AC VOLTAGES; ANISOTROPIC WET CHEMICAL ETCHING; BROAD BEAMS; DISPLACEMENT; ELECTRICAL MEASUREMENTS; ELECTRICAL RESISTANCES; FIB IMPLANTATION; I-V CHARACTERISTICS; NANO-BRIDGES; NANO-STRUCTURES; PHOTOLITHOGRAPHIC PATTERNING; SI NANOSTRUCTURES; SI NANOWIRES; SILICON-ON-INSULATOR SUBSTRATES; STATIC AND DYNAMICS; TECHNOLOGICAL PLATFORMS; TEMPERATURE DEPENDENCES; THERMAL SENSORS;

ANISOTROPIC ETCHING; ANISOTROPY; ELECTRIC WIRE; FABRICATION; FOCUSED ION BEAMS; GALLIUM ALLOYS; ION BOMBARDMENT; ION IMPLANTATION; MICROELECTRONIC PROCESSING; NANOWIRES; SENSORS; SILICON; THREE DIMENSIONAL;

WET ETCHING;

EID: 65249125942     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.01.047     Document Type: Article

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