Hopping transport of electrons and holes at localized band tail states in amorphous hydrogenated silicon and amorphous heavy-hydrogenated silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 A, 2005, Pages 4764-4769

  Ohno, Kazuhiro ^a   Murayama, Kazuro ^a   Matsuda, Akihisa ^b  

^a NIHON UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Amorphous silicon; Attempt to escape frequency; Hopping; Mobility; Multiple trapping; Semiconductor; Time of flight

Indexed keywords

ACTIVATION ENERGY; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; ELECTRONS; HOLE MOBILITY; PHONONS;

HOPPING; MULTIPLE TRAPPING; TIME-OF-FLIGHT;

AMORPHOUS SILICON;

EID: 31644445029     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.4764     Document Type: Article

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