Ultrathin channel vertical DG MOSFET fabricated by using ion-bombardment-retarded etching

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2078-2085

  Masahara, Meishoku ^a   Liu, Yongxun ^a   Hosokawa, Shinichi ^a   Matsukawa, Takashi ^a   Ishii, Kenichi ^a   Tanoue, Hisao ^a   Sakamoto, Kunihiro ^a   Sekigawa, Toshihiro ^a   Yamauchi, Hiromi ^a   Kanemaru, Seigo ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Dopant ion implantation; Hot alkaline solution; Ion bombardment retarded etching; Ultrathin channel; Vertical double gate (DG) MOSFET; Wet etching

Indexed keywords

ETCHING; GATES (TRANSISTOR); ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

DOPANT ION IMPLANTATION; HOT ALKALINE SOLUTION; ION BOMBARDMENT RETARDED ETCHING; ULTRATHIN CHANNEL; VERTICAL DOUBLE GATE MOSFET; WET ETCHING;

MOSFET DEVICES;

EID: 10644274504     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.838335     Document Type: Article

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