Three-dimensional nanofabrication utilizing selective etching of silicon induced by focused ion beam irradiation

JSME International Journal, Series C: Mechanical Systems, Machine Elements and Manufacturing

Volumn 49, Issue 2, 2006, Pages 583-589

  Kawasegi, Noritaka ^a   Morita, Noboru ^a   Yamada, Shigeru ^a   Takano, Noboru ^a   Oyama, Tatsuo ^a   Ashida, Kiwamu ^b   Taniguchi, Jun ^c   Miyamoto, Iwao ^c  

^a UNIVERSITY OF TOYAMA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Focused ion beam; Ion beam lithography; Single crystal silicon; Three dimensional nanofabrication; Wet chemical etching

Indexed keywords

ETCHING; ION BEAM LITHOGRAPHY; IRRADIATION; SILICON; SINGLE CRYSTALS;

FOCUSED ION BEAM; WET CHEMICAL ETCHING;

NANOTECHNOLOGY;

ETCHING; ION BEAM LITHOGRAPHY; IRRADIATION; NANOTECHNOLOGY; SILICON; SINGLE CRYSTALS;

EID: 33845679098     PISSN: 13447653     EISSN: 1347538X     Source Type: Journal    
DOI: 10.1299/jsmec.49.583     Document Type: Article

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