MnOxself-forming process for TFT electrode application

IDW '08 - Proceedings of the 15th International Display Workshops

Volumn 1, Issue , 2008, Pages 103-104

  Koike, J ^a   Sano, M ^a   Hirota, K ^a   Neishi, K ^a   Sutou, Y ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION PROMOTER; AFTER-HEAT TREATMENT; DIFFUSION BARRIER LAYERS; FORMING PROCESS; GLASS SUBSTRATES; IV CHARACTERISTICS; MN OXIDES; OHMIC BEHAVIOR; SI SUBSTRATES; SUBSTRATE MATERIAL;

MANGANESE; MANGANESE OXIDE;

SUBSTRATES;

EID: 77954170751     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. 2 interface", J. Appl. Phys., 102, 043527 (2007).
2. Watanabe et al., "Robust BEOL process integration with ultra low-k dielectric and self-fomred MnOx barrier technology for 32 nm-node and beyond", Proc. IITC, 10. 7 (2008).