Copper source/drain electrode contact resistance effects in amorphous indium-gallium-zinc-oxide thin film transistors

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 7-8, 2009, Pages 239-241

  Kim, Woong Sun ^a   Moon, Yeon Keon ^a   Lee, Sih ^a   Kang, Byung Woo ^a   Kwon, Tae Seok ^a   Kim, Kyung Taek ^a   Park, Jong Wan ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; ELECTRODE MATERIAL; FIELD-EFFECT MOBILITIES; INDIUM GALLIUM ZINC OXIDES; OUTPUT CHARACTERISTICS; OXIDE THIN FILMS; SOURCE/DRAIN ELECTRODES; TRANSFER CHARACTERISTICS; TRANSMISSION LINE METHODS;

AMORPHOUS FILMS; COPPER; COPPER OXIDES; ELECTROCHEMICAL ELECTRODES; GALLIUM; INDIUM; THIN FILMS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 71149110092     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903225     Document Type: Article

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