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Volumn 30, Issue 9, 2011, Pages 1321-1334

Process variation and temperature-aware full chip oxide breakdown reliability analysis

Author keywords

Oxide breakdown; process variation; reliability; spatial correlation; temperature

Indexed keywords

CHIP-LEVEL; COMPUTATIONALLY EFFICIENT; CONVENTIONAL APPROACH; FULL-CHIP RELIABILITY; GATE OXIDE BREAKDOWN; GATE OXIDE THICKNESS; HUGE SAMPLES; KEY FACTORS; MONTE CARLO SIMULATION; OXIDE BREAKDOWN; OXIDE THICKNESS; PROCESS VARIATION; RELATIVE LOCATION; RELIABILITY FUNCTIONS; RUNTIMES; SPATIAL CORRELATIONS; STATISTICAL FRAMEWORK; TEMPERATURE VARIATION; THICKNESS VARIATION; THREE ORDERS OF MAGNITUDE; USEFUL LIFETIME; WITHIN DIES;

EID: 80052057979     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2011.2142183     Document Type: Article
Times cited : (22)

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