Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 171-174

  Kaczer, B ^a   Crupi, F ^b   Degraeve, R ^a   Roussel, Ph ^a   Ciofi, C ^b   Groeseneken, G ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF MESSINA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; FREQUENCIES; HOT CARRIERS; OSCILLATORS (ELECTRONIC); STRESS ANALYSIS;

RING OSCILLATOR CIRCUITS;

CMOS INTEGRATED CIRCUITS;

EID: 0036923374     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. "Topical issue on oxide reliability." Semicond. Sci. Technol., vol. 5. 2000.
2. C. Felsch & E. Rosenbaum. Proc. Int. Reliab. Phys. Symp., 1995, pp. 142-148.
3. Wang B. et al., IEEE Electron Dev. Lett. 22, 2001, pp. 224-226.
4. B. Kaczer et al., IEDM Tech. Dig., 2000, pp. 553-556.
5. R. Degraeve et al., Proc. IEEE T. Dev. Mat. Reliab., 2001, pp. 163-169.
6. B. Kaczer et al., IEEE T. Electron Dev. 49, 2002, pp. 507-513.
7. N. A. Dumin et al., Proc. Int. Reliab. Phys. Symp., 2002. pp. 73-78.
8. K. Deguchi et al., IEDM Tech. Dig., 2000, pp.327-330.
9. F. Crupi et al., Proc. Int. Reliab. Phys. Symp., 2002, pp. 55-59.