-
1
-
-
4244082937
-
Gate oxide scaling limits and projection
-
C. Hu, "Gate oxide scaling limits and projection," in IEEE/IEDM, p. 96, 1996.
-
(1996)
IEEE/IEDM
, pp. 96
-
-
Hu, C.1
-
2
-
-
34250785295
-
-
International Technology Roadmap for Semiconductors, and Structures
-
International Technology Roadmap for Semiconductors, 2004 Update - Process Integration, Devices, and Structures
-
(2004)
Update - Process Integration, Devices
-
-
-
3
-
-
0036923374
-
Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits
-
B. Kaczer, F. Crupi, R. Degraeve, P. Roussel, C. Ciofi, and G. Groeseneker, "Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits," in IEEE/IEDM, p. 171, 2002.
-
(2002)
IEEE/IEDM
, pp. 171
-
-
Kaczer, B.1
Crupi, F.2
Degraeve, R.3
Roussel, P.4
Ciofi, C.5
Groeseneker, G.6
-
4
-
-
0036494245
-
Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
-
B. Kaczer, R. Degraeve, M. Rasras, K. Mieroop, P. Roussel, and G. Groeseseken, "Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability," IEEE Trans. on Electron Devices, vol. 49, no. 3, p. 500, 2002.
-
(2002)
IEEE Trans. on Electron Devices
, vol.49
, Issue.3
, pp. 500
-
-
Kaczer, B.1
Degraeve, R.2
Rasras, M.3
Mieroop, K.4
Roussel, P.5
Groeseseken, G.6
-
5
-
-
21644481983
-
Implant damage and gate-oxide-edge effects on product reliability
-
Y.-H. Lee, R. Nachman, S. Hu, N. Mielke, and J. Liu, "Implant damage and gate-oxide-edge effects on product reliability," in IEEE/IEDM, p. 481, 2004.
-
(2004)
IEEE/IEDM
, pp. 481
-
-
Lee, Y.-H.1
Nachman, R.2
Hu, S.3
Mielke, N.4
Liu, J.5
-
6
-
-
0035715842
-
An enhanced 130nm generation logic technology featuring 60nm transistors optimized for high performance and low power at 0.7-1.4V
-
S. Thompson, et al., "An enhanced 130nm generation logic technology featuring 60nm transistors optimized for high performance and low power at 0.7-1.4V," in IEEE/IEDM, p. 257, 2001.
-
(2001)
IEEE/IEDM
, pp. 257
-
-
Thompson, S.1
-
7
-
-
0842288185
-
Effect of pMOST bias-temperature instability on circuit reliability performance
-
Y.-H. Lee, N. Mielke, B, Sabi, S. Stadler, R. Nachman, and S. Hu, "Effect of pMOST bias-temperature instability on circuit reliability performance," in IEEE/IEDM, p. 353, 2003.
-
(2003)
IEEE/IEDM
, pp. 353
-
-
Lee, Y.-H.1
Mielke, N.2
Sabi, B.3
Stadler, S.4
Nachman, R.5
Hu, S.6
-
8
-
-
36549102659
-
Substrate hole current and oxide breakdown
-
I.C. Chen, S.E. Holland, K.K. Young, C. Chang and C. Hu, "Substrate hole current and oxide breakdown," Appl. Phys. Lett., vol. 49, p. 669, 1986.
-
(1986)
Appl. Phys. Lett
, vol.49
, pp. 669
-
-
Chen, I.C.1
Holland, S.E.2
Young, K.K.3
Chang, C.4
Hu, C.5
-
9
-
-
0032275853
-
Reliability projection for ultra-thin oxides at low voltage
-
J. Stathis and D. DiMaria, "Reliability projection for ultra-thin oxides at low voltage," in IEEE/IEDM, p. 167, 1998.
-
(1998)
IEEE/IEDM
, pp. 167
-
-
Stathis, J.1
DiMaria, D.2
-
10
-
-
21544458715
-
Impact ionization, trap generation, degradation, and breakdown in silicon dioxide films on silicon
-
D.J. DiMaria, E. Cartier, D. Arnold, "Impact ionization, trap generation, degradation, and breakdown in silicon dioxide films on silicon," J. Appl. Phys., vol. 73(7), p. 3367, 1993.
-
(1993)
J. Appl. Phys
, vol.73
, Issue.7
, pp. 3367
-
-
DiMaria, D.J.1
Cartier, E.2
Arnold, D.3
-
11
-
-
17644380079
-
New global insight in ultra-thin oxide reliability using accurate experimental methodology and comprehensive database
-
E. Wu, E. Nowak, A. Vayshenker, J. McKenna, D. Harmon, and R. Vollertsen, "New global insight in ultra-thin oxide reliability using accurate experimental methodology and comprehensive database," IEEE Trans. Device and Material Reliability, 1, p. 69, 2001
-
(2001)
IEEE Trans. Device and Material Reliability
, vol.1
, pp. 69
-
-
Wu, E.1
Nowak, E.2
Vayshenker, A.3
McKenna, J.4
Harmon, D.5
Vollertsen, R.6
-
12
-
-
0011076409
-
Underlying physics of the thermochemical E model in describing low-field time-dependent breakdown in SiO2 thin films
-
J.W. McPherson and H.C. Mogul, "Underlying physics of the thermochemical E model in describing low-field time-dependent breakdown in SiO2 thin films," J. Appl. Phys., vol. 84, p. 1513, 1998.
-
(1998)
J. Appl. Phys
, vol.84
, pp. 1513
-
-
McPherson, J.W.1
Mogul, H.C.2
-
13
-
-
0034784919
-
A new quantitative hydrogen-based model for ultra-thin oxide breakdown
-
J. Sune and E. Wu, "A new quantitative hydrogen-based model for ultra-thin oxide breakdown," Symposium on VLSI Technology, p. 97, 2001.
-
(2001)
Symposium on VLSI Technology
, pp. 97
-
-
Sune, J.1
Wu, E.2
-
14
-
-
84941504025
-
Electrical breakdown in thin gate and tunneling oxides
-
I. C. Chen, S.E. Holland, C. Hu, "Electrical breakdown in thin gate and tunneling oxides," IEEE Trans. on Electron Devices, vol. 32, no. 2, p. 413, 1985.
-
(1985)
IEEE Trans. on Electron Devices
, vol.32
, Issue.2
, pp. 413
-
-
Chen, I.C.1
Holland, S.E.2
Hu, C.3
-
15
-
-
0024122432
-
Modeling and characterization of gate oxide reliability
-
J.C. Lee, I.C. Chen, and C. Hu, "Modeling and characterization of gate oxide reliability," IEEE Trans. Electron Devices, vol. 35, p. 2268, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 2268
-
-
Lee, J.C.1
Chen, I.C.2
Hu, C.3
-
16
-
-
0022223020
-
Acceleration factors for thin gate oxide stressing
-
J.W. McPherson and D.A. Baglee, "Acceleration factors for thin gate oxide stressing," in IEEE/IRPS, p. 1, 1985
-
(1985)
IEEE/IRPS
, pp. 1
-
-
McPherson, J.W.1
Baglee, D.A.2
-
17
-
-
0003139842
-
Voltage-dependent voltage acceleration of oxide breakdown for ultra-thin oxides
-
E. Wu, et al., "Voltage-dependent voltage acceleration of oxide breakdown for ultra-thin oxides," in IEEE/IEDM, p. 54, 2000.
-
(2000)
IEEE/IEDM
, pp. 54
-
-
Wu, E.1
-
18
-
-
0033741528
-
Experimental evidence for voltage driven breakdown models in ultrathin gate oxide
-
P.E. Nicollian, W. Hunter, and J. Hu, "Experimental evidence for voltage driven breakdown models in ultrathin gate oxide," in IEEE/IRPS, p. 7, 2000.
-
(2000)
IEEE/IRPS
, pp. 7
-
-
Nicollian, P.E.1
Hunter, W.2
Hu, J.3
-
19
-
-
0032614265
-
Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
-
D.J. DiMaria and J. Stathis, "Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films," Appl. Phys. Lett., vol. 74, p. 1752, 1999.
-
(1999)
Appl. Phys. Lett
, vol.74
, pp. 1752
-
-
DiMaria, D.J.1
Stathis, J.2
-
20
-
-
0018727292
-
Method for determining reliability screens for time dependent dielectric breakdown
-
D.L. Crook, "Method for determining reliability screens for time dependent dielectric breakdown," in IEEE/IRPS, p. 1, 1979.
-
(1979)
IEEE/IRPS
, pp. 1
-
-
Crook, D.L.1
-
21
-
-
0018700715
-
Low field time dependent dielectric integrity
-
E.S. Anolick and G.R. Nelson, "Low field time dependent dielectric integrity," in IEEE/IRPS, p. 8, 1979.
-
(1979)
IEEE/IRPS
, pp. 8
-
-
Anolick, E.S.1
Nelson, G.R.2
-
22
-
-
49849107593
-
Failure rate distribution of electronic components
-
J.M. Grange and J. Dorleans, "Failure rate distribution of electronic components," J. Microelectronic Reliability, vol. 9, p. 511, 1979.
-
(1979)
J. Microelectronic Reliability
, vol.9
, pp. 511
-
-
Grange, J.M.1
Dorleans, J.2
-
23
-
-
3743115412
-
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
-
R. Degrave, et al., "A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides," in IEEE/IEDM, p. 866, 1995.
-
(1995)
IEEE/IEDM
, pp. 866
-
-
Degrave, R.1
-
24
-
-
0003237889
-
Weibull slopes, critical defect density, and the validity of SILC measurements
-
E. Wu, J. Sune, E. Nowak, W. Lai, and J. McKenna, "Weibull slopes, critical defect density, and the validity of SILC measurements," in IEEE/IEDM, p. 125, 2001.
-
(2001)
IEEE/IEDM
, pp. 125
-
-
Wu, E.1
Sune, J.2
Nowak, E.3
Lai, W.4
McKenna, J.5
-
25
-
-
0034994978
-
Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
-
R. Degraeve, B. Kaczer, A. Keersgieter, and G. Groesenken, "Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications," in IEEE/IRPS, p. 360, 2001.
-
(2001)
IEEE/IRPS
, pp. 360
-
-
Degraeve, R.1
Kaczer, B.2
Keersgieter, A.3
Groesenken, G.4
-
26
-
-
34250742120
-
-
W. Nelson, Accelerated Testing. New York: Wiley, 1990. p. 387.
-
W. Nelson, Accelerated Testing. New York: Wiley, 1990. p. 387.
-
-
-
-
27
-
-
0035362378
-
New Physics-Based Analytic Approach to the Thin-Oxide Breakdown Statistics
-
J. Sune, "New Physics-Based Analytic Approach to the Thin-Oxide Breakdown Statistics", IEEE Elect. Dev. Lett., Vol. 22, p. 296, 2001.
-
(2001)
IEEE Elect. Dev. Lett
, vol.22
, pp. 296
-
-
Sune, J.1
-
28
-
-
0000950432
-
Nonuniqueness of time-dependent- dielectric-breakdown distributions
-
J. C. Jackson, et al., "Nonuniqueness of time-dependent- dielectric-breakdown distributions", Appl. Phys. Lett, Vol. 71, p. 3682, 1997.
-
(1997)
Appl. Phys. Lett
, vol.71
, pp. 3682
-
-
Jackson, J.C.1
-
30
-
-
0036926527
-
Statistics of successive breakdown events in gate oxides
-
J. Suñé and E. Y.Wu, "Statistics of successive breakdown events in gate oxides," in IEEE/IEDM, p. 147, 2002.
-
(2002)
IEEE/IEDM
, pp. 147
-
-
Suñé, J.1
Wu, E.Y.2
-
31
-
-
0036927324
-
Statistically Independent Soft Breakdowns Redefine Oxide Reliability Specifications
-
M.A. Alam, R.K. Smith, B.E. Weir, P.J. Silverman, "Statistically Independent Soft Breakdowns Redefine Oxide Reliability Specifications", in IEEE/IEDM, p. 151, 2002
-
(2002)
IEEE/IEDM
, pp. 151
-
-
Alam, M.A.1
Smith, R.K.2
Weir, B.E.3
Silverman, P.J.4
-
32
-
-
17444392476
-
Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance
-
C.H. Tung, et al., "Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance," IEEE Trans. on Electron Devices, vol. 52, no. 4, p. 473, 2005.
-
(2005)
IEEE Trans. on Electron Devices
, vol.52
, Issue.4
, pp. 473
-
-
Tung, C.H.1
-
33
-
-
0242410364
-
Successive breakdown events and their relation with soft and hard breakdown modes
-
July
-
E. Y. Wu and J. Suñé, "Successive breakdown events and their relation with soft and hard breakdown modes," IEEE Electron Device Lett., vol. 24, pp. 692-694, July 2003.
-
(2003)
IEEE Electron Device Lett
, vol.24
, pp. 692-694
-
-
Wu, E.Y.1
Suñé, J.2
-
34
-
-
10044286895
-
The impact of PMOST bias-temperature degradation on logic circuit reliability performance
-
Y.-H. Lee, S. Jacobs, S. Stadler, N. Mielke, and R. Nachman, "The impact of PMOST bias-temperature degradation on logic circuit reliability performance," J. Microelectronic Reliability, vol. 45, p. 107, 2005.
-
(2005)
J. Microelectronic Reliability
, vol.45
, pp. 107
-
-
Lee, Y.-H.1
Jacobs, S.2
Stadler, S.3
Mielke, N.4
Nachman, R.5
-
35
-
-
3042604394
-
6-T cell circuit dependent Gox SBD model for accurate prediction of observed Vccmin test voltage dependency
-
K. Mueller, S. Gupta, S. Pae, M. Agostinelli, and P. Aminzadeh, "6-T cell circuit dependent Gox SBD model for accurate prediction of observed Vccmin test voltage dependency," in IEEE/IRPS, p. 426, 2004.
-
(2004)
IEEE/IRPS
, pp. 426
-
-
Mueller, K.1
Gupta, S.2
Pae, S.3
Agostinelli, M.4
Aminzadeh, P.5
-
36
-
-
10444267418
-
Multi-level approach for high-precision cache fault isolation - case study: Itanium II process low voltage cache yield improvement
-
C.L. Kong and M. Islam, "Multi-level approach for high-precision cache fault isolation - case study: Itanium II process low voltage cache yield improvement," International Symposium for Testing and Failure Analysis (ISTFA), p. 498, 2004.
-
(2004)
International Symposium for Testing and Failure Analysis (ISTFA)
, pp. 498
-
-
Kong, C.L.1
Islam, M.2
|