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Volumn , Issue , 2007, Pages 96-97

Design of the Power6™ microprocessor

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT LAYOUT; LOGIC CIRCUITS; NATURAL FREQUENCIES; PERMITTIVITY; SILICON ON INSULATOR TECHNOLOGY;

EID: 34548817261     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2007.373605     Document Type: Conference Paper
Times cited : (90)

References (2)
  • 1
    • 33745148992 scopus 로고    scopus 로고
    • High Performance 65nm SOI Technology with Dual Stress Liner and Low Capacitance SRAM cell
    • VLSI Technology, pp, June
    • E. Leobandung, H. Nayakama, D. Mocuta et al., "High Performance 65nm SOI Technology with Dual Stress Liner and Low Capacitance SRAM cell", 2005 Symp. VLSI Technology, pp. 126-127, June, 2005.
    • (2005) 2005 Symp , pp. 126-127
    • Leobandung, E.1    Nayakama, H.2    Mocuta, D.3
  • 2
    • 39749083510 scopus 로고    scopus 로고
    • 4GHz+ Low-Latency Fixed-Point and Binary Floating-Point Execution Units for the POWER6™ Processor
    • Feb
    • B. Curran, B. McCredie, L. Sigal, et al., "4GHz+ Low-Latency Fixed-Point and Binary Floating-Point Execution Units for the POWER6™ Processor", IEEE J. Solid-State Circuits, pp. 1728-1734, Feb., 2006.
    • (2006) IEEE J. Solid-State Circuits , pp. 1728-1734
    • Curran, B.1    McCredie, B.2    Sigal, L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.