Rapid thermal annealing of ZnO thin films grown at room temperature

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 2, 2010, Pages 216-219

  Jang, Young Rae ^a   Yoo, Keon Ho ^a   Park, Seung Min ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AIR AMBIENT; AMBIENT CONDITIONS; ANNEALING TEMPERATURES; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GRAZING INCIDENCE X-RAY DIFFRACTION; HIGH QUALITY; PHOTOLUMINESCENCE SPECTRUM; POST ANNEALING; ROOM TEMPERATURE; SI (100) SUBSTRATE; UV EMISSIONS; VISIBLE EMISSIONS; ZNO THIN FILM;

ATMOSPHERIC PRESSURE; DEPOSITION; FIELD EMISSION; FIELD EMISSION MICROSCOPES; FILM GROWTH; METALLIC FILMS; OPTICAL FILMS; PULSED LASER DEPOSITION; PULSED LASERS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ATMOSPHERIC TEMPERATURE;

EID: 77949377425     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3290759     Document Type: Article

References (28)

1. H. Y. Xu, Y. C. Liu, Y. X. Liu, C. S. Xu, C. L. Shao, and R. Mu, Appl. Phys. B: Lasers Opt. APBOEM 0946-2171 80, 871 (2005). 10.1007/s00340-005-1790-9
2. V. Vaithianathan, Y. H. Lee, B. T. Lee, S. Hishita, and S. S. Kim, J. Cryst. Growth JCRGAE 0022-0248 287, 85 (2006). 10.1016/j.jcrysgro.2005.10.048
3. L. Chen, Z. Q. Chen, X. Z. Shang, C. Liu, S. Xu, and Q. Fu, Solid State Commun. SSCOA4 0038-1098 137, 561 (2006). 10.1016/j.ssc.2005.12.039
4. Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, Appl. Phys. Lett. APPLAB 0003-6951 83, 4719 (2003). 10.1063/1.1632537
5. Z. Q. Chen, S. Yamamoto, A. Kawasuso, Y. Xu, and T. Sekiguchi, Appl. Surf. Sci. ASUSEE 0169-4332 244, 377 (2005). 10.1016/j.apsusc.2004.10.093
6. V. Gupta, P. Bhattacharya, Y. I. Yuzuk, K. Sreenivas, and R. S. Katiyar, J. Cryst. Growth JCRGAE 0022-0248 287, 39 (2006). 10.1016/j.jcrysgro.2005.10.039
7. M. Zerdali, S. Hamzaoui, F. H. Teherani, and D. Rogers, Mater. Lett. MLETDJ 0167-577X 60, 504 (2006). 10.1016/j.matlet.2005.09.024
8. D. J. Rogers, Phys. Status Solidi C ZZZZZZ 1610-1634 3, 1038 (2006). 10.1002/pssc.200564756
9. N. Gopalakrishnan, B. C. Shin, H. S. Lim, G. Y. Kim, and Y. S. Yu, Physica B PHYBE3 0921-4526 376-377, 756 (2006). 10.1016/j.physb.2005.12.189
10. D.-K. Hwang, H.-S. Kim, J.-H. Lim, J.-Y. Oh, J.-H. Yang, S.-J. Park, K.-K. Kim, D. C. Look, and Y. S. Park, Appl. Phys. Lett. APPLAB 0003-6951 86, 151917 (2005). 10.1063/1.1895480
11. T. Yen, D. Strome, S. J. Kim, A. N. Cartwright, and W. A. Anderson, J. Electron. Mater. JECMA5 0361-5235 37, 764 (2008). 10.1007/s11664-007-0357-4
12. D. H. Kim, N. G. Cho, K. S. Kim, S. Han, and H. G. Kim, J. Electroceram. JOELFJ 1385-3449 22, 82 (2009). 10.1007/s10832-007-9393-y
13. J. G. Lu, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, and S. Fujita, J. Cryst. Growth JCRGAE 0022-0248 299, 1 (2007). 10.1016/j.jcrysgro. 2006.10.251
14. I. Sakaguchi, H. Ryoken, S. Hishita, and H. Haneda, Thin Solid Films THSFAP 0040-6090 506-507, 184 (2006). 10.1016/j.tsf.2005.08.021
15. Y. M. Lu, H. W. Liang, D. Z. Shen, Z. Z. Zhang, J. Y. Zhang, D. X. Zhao, Y. C. Liu, and X. W. Fan, J. Lumin. JLUMA8 0022-2313 119-120, 228 (2006). 10.1016/j.jlumin.2005.12.035
16. Z. K. Tang, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, J. Cryst. Growth JCRGAE 0022-0248 287, 169 (2006). 10.1016/j.jcrysgro.2005.10.062
17. S. F. Chichibu, T. Onuma, M. Kubota, and A. Uedono, J. Appl. Phys. JAPIAU 0021-8979 99, 093505 (2006). 10.1063/1.2193162
18. J. S. Ha, C. H. Bae, S. H. Nam, S. M. Park, Y. R. Jang, K. H. Yoo, and K. Park, Appl. Phys. Lett. APPLAB 0003-6951 82, 3436 (2003). 10.1063/1.1573335
19. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. JAPIAU 0021-8979 79, 7983 (1996). 10.1063/1.362349
20. A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, J. Phys. Chem. B JPCBFK 1089-5647 104, 1715 (2000). 10.1021/jp993327z
21. F. Leiter, H. Alves, D. Pfisterer, N. G. Romanov, D. M. Hofmann, and B. K. Meyer, Physica B PHYBE3 0921-4526 340-342, 201 (2003). 10.1016/j.physb.2003. 09.031
22. E. G. Bylander, J. Appl. Phys. JAPIAU 0021-8979 49, 1188 (1978). 10.1063/1.325059
23. M. Liu, A. H. Kitai, and P. Mascher, J. Lumin. JLUMA8 0022-2313 54, 35 (1992). 10.1016/0022-2313(92)90047-D
24. Y. R. Jang, K. H. Yoo, and S. M. Park, J. Korean Phys. Soc. KPSJAS 0374-4884 53, 110 (2008).
25. Y. R. Jang, K. H. Yoo, and S. M. Park, Inst. Phys. Conf. Ser. IPCSEP 0951-3248 184, 389 (2005).
26. R. Ondo-Ndong, F. Pascal-Delannoy, A. Boyer, A. Giani, and A. Foucaran, Mater. Sci. Eng., B MSBTEK 0921-5107 97, 68 (2003). 10.1016/S0921-5107(02)00406- 3
27. R. Ondo-Ndong, G. Ferblantier, M. A. Kalfioui, A. Boyer, and A. Foucaran, J. Cryst. Growth JCRGAE 0022-0248 255, 130 (2003). 10.1016/S0022-0248(03)01243- 0
28. J. J. Chen, Y. Gao, F. Zeng, D. M. Li, and F. Pan, Appl. Surf. Sci. ASUSEE 0169-4332 223, 318 (2004). 10.1016/j.apsusc.2003.09.015