The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Thin Solid Films

Volumn 518, Issue 22, 2010, Pages 6325-6329

  Bae, Hyeon Seok ^a   Kwon, Jae Hong ^a   Chang, Seongpil ^a   Chung, Myung Ho ^a   Oh, Tae Yeon ^a   Park, Jung Ho ^a   Lee, Sang Yeol ^b   Pak, James Jungho ^a   Ju, Byeong Kwon ^a  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide; Contact resistance; Oxide thin film transistor; Rapid thermal annealing; Transmission line method (TLM)

Indexed keywords

ELECTRICAL CHARACTERISTIC; INDIUM GALLIUM ZINC OXIDES; ON/OFF CURRENT RATIO; OXIDE THIN FILM TRANSISTOR; POST ANNEALING; POST-ANNEALING EFFECT; SATURATION MOBILITY; SILICON WAFER SUBSTRATES; SOURCE AND DRAINS; SUBTHRESHOLD SWING; TRANSMISSION LINE METHOD (TLM); TRANSMISSION LINE METHODS;

AMORPHOUS FILMS; CONTACT RESISTANCE; DRAIN CURRENT; ELECTRIC LINES; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; THIN FILMS; TRANSMISSION LINE THEORY; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77956058045     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.02.073     Document Type: Conference Paper

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