Influence of high temperature postdeposition annealing on the atomic configuration in amorphous In-Ga-Zn-O films

Electrochemical and Solid-State Letters

Volumn 12, Issue 6, 2009, Pages

  Cho, Deok Yong ^a   Song, Jaewon ^a   Shin, Yong Cheol ^a   Hwang, Cheol Seong ^a   Choi, W S ^b   Jeong, Jae Kyeong ^c  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CONFIGURATIONS; HIGH TEMPERATURES; LOCAL STRUCTURES; POST-DEPOSITION ANNEALING; X- RAY DIFFRACTIONS; ZN CONTENTS; ZN IONS; ZNO;

ANNEALING; CRYSTAL STRUCTURE; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 64549116356     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3110032     Document Type: Article

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