InSb nanowire field-effect transistors and quantum-dot devices

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 907-914

  Nilsson, H A ^a   Deng, M T ^a   Caroff, P ^a,b   Thelander, C ^a   Samuelson, L ^a   Wernersson, L E ^a   Xu, H Q ^a  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Field effect transistors (FETs); indium compounds; quantum dots; semiconductor growth; single electron transistors

Indexed keywords

AMBIPOLAR TRANSISTORS; BACK GATES; ELECTRICAL MEASUREMENT; ELECTRON NUMBER; FABRICATED DEVICE; FABRICATION TECHNOLOGIES; INAS; INSB NANOWIRE; INTERFERENCE EFFECTS; METAL GATE; QUANTUM DEVICE; QUANTUM DOT; SI SUBSTRATES; SINGLE ELECTRON; TOP GATE; TRANSISTOR CHARACTERISTICS;

ATOMIC LAYER DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; ELECTRIC WIRE; EQUIPMENT; FABRICATION; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM OXIDES; INDIUM ANTIMONIDES; MESFET DEVICES; NANOWIRES; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON COMPOUNDS;

TRANSISTORS;

EID: 80051694798     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2090135     Document Type: Article

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