Local Gate Control of a Carbon Nanotube Double Quantum Dot

Science

Volumn 303, Issue 5658, 2004, Pages 655-658

  Mason, N ^a   Biercuk, M J ^a   Marcus, C H ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTORS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); SEMICONDUCTOR QUANTUM DOTS;

QUANTUM COMPUTATION;

CARBON NANOTUBES;

CARBON NANOTUBE;

NANOTECHNOLOGY;

ARTICLE; CALCULATION; CONDUCTOR; DEVICE; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; ELECTRICITY; ENERGY; MOLECULAR DYNAMICS; PRIORITY JOURNAL; QUANTUM THEORY;

EID: 0942290575     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1093605     Document Type: Article

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29. The authors wish to thank J. Hone, A. C. Johnson, and J. B. Miller for useful discussions, and H. Park for assistance with the design of the nanotube chemical vapor deposition system. This work was supported by funding from the NSF through the Harvard Materials Research Science and Engineering Center, the NSF under EIA-0210737, and the Army Research Office/Advanced Research and Development Authority Quantum Computing program. N.M. acknowledges support from the Harvard Society of Fellows. M.J.B. acknowledges support from an NSF Graduate Research Fellowship and from an ARO Quantum Computing Graduate Research Fellowship.