Single-electron tunneling in InP nanowires

Applied Physics Letters

Volumn 83, Issue 2, 2003, Pages 344-346

  De Franceschi, S ^a   Van Dam, J A ^a   Bakkers, E P A M ^b   Feiner, L F ^b   Gurevich, L ^a   Kouwenhoven, L P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CATALYSTS; COULOMB BLOCKADE; CRYSTAL GROWTH; DEPOSITION; ELECTRON BEAMS; ELECTRON TUNNELING; FIELD EFFECT SEMICONDUCTOR DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SILICON;

ENERGY QUANTIZATION;

NANOSTRUCTURED MATERIALS;

EID: 0042769310     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1590426     Document Type: Article

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