SCOPUS 정보 검색 플랫폼

Volumn 46, Issue 4 B, 2007, Pages 2629-2631

Nanowire field-effect transistor

Author keywords

InAs; MISFET; Nanowire; Transistor; Wrap gate

Indexed keywords

INDIUM ARSENIDE; NANOWIRES; SCALABILITY; TRANSCONDUCTANCE;

DEPLETION MODE; DRIVE CURRENT; GATE LENGTH; NANOWIRE MATRIX; NANOWIRE TRANSISTORS;

MISFET DEVICES;

EID: 34547856686 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.2629 Document Type: Article

Times cited : (18)

References (10)

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- After careful SEM observation it appears that there is slightly less metal close to the nanowires, which indicates that the gate length is actually shorter than the metal thickness
- After careful SEM observation it appears that there is slightly less metal close to the nanowires, which indicates that the gate length is actually shorter than the metal thickness.

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