Explanation of the charge trapping properties of silicon nitride storage layers for NVMs-Part II: Atomistic and electrical modeling

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2490-2499

  Vianello, Elisa ^a,b   Driussi, Francesco ^a   Blaise, P ^a   Palestri, Pierpaolo ^b   Esseni, David ^a   Perniola, Luca ^b   Molas, Gabriel ^b   De Salvo, Barbara ^b   Selmi, Luca ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b CEA LETI   (France)

Author keywords

Ab initio; charge trap; metal gate Al 2O3 nitride oxide silicon (MANOS); nonvolatile memory (NVM); silicon nitride (SiN) composition

Indexed keywords

AB INITIO; ATOMISTIC MODELS; CHARGE TRAP; CHARGE TRAPPING PROPERTIES; ELECTRICAL CHARACTERIZATION; ELECTRICAL MODELING; ELECTRICAL MODELS; ENERGY LEVEL; HYDROGEN ATOMS; MATERIAL ANALYSIS; MEMORY CELL; MEMORY EFFECTS; METAL GATE/AL 2O3/NITRIDE/OXIDE/SILICON (MANOS); NITRIDE STORAGE; NONVOLATILE MEMORY (NVM); NONVOLATILE MEMORY DEVICES; PROGRAM/ERASE; SI DANGLING BONDS; SIN FILMS; STORAGE LAYERS; TRAPPING PROPERTIES; TUNNEL OXIDES;

CHARGE TRAPPING; DANGLING BONDS; HYDROGEN BONDS; NONVOLATILE STORAGE; SEMICONDUCTOR STORAGE; STOICHIOMETRY;

SILICON NITRIDE;

EID: 79960848574     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2156407     Document Type: Article

References (50)

1. N. Goel, D. Gilmer, H. Park, V. Diaz, Y. Sun, J. Price, C. Park, P. Pianetta, P. Kirsch, and R. Jammy, "Erase and retention improvements in charge trap flash through engineered charge storage layer," IEEE Electron Device Lett., vol. 30, no. 3, pp. 216-218, Mar. 2009.
2. S. Sandhya, U. Ganguly, N. Chattar, C. Olsen, S. M. Seutter, L. D. R. Hung, J. M. Vasi, and S. Mahapatra, "Effect of SiN on performance and reliability of charge trap flash (CTF) under Fowler-Nordheim tunneling program/erase operation," IEEE Electron Device Lett., vol. 30, no. 2, pp. 171-173, Feb. 2009.
3. E. Vianello, L. Perniola, P. Blaise, G. Molas, J. Colonna, F. Driussi, P. Palestri, D. Esseni, L. Selmi, N. Rochat, C. Licitra, D. Lafond, R. Kies, G. Reimbold, B. D. Salvo, and F. Boulanger, "New insight on the charge trapping mechanisms of SiN-based memory by atomistic simulations and electrical modeling," in IEDM Tech. Dig., 2009, pp. 83-86.
4. G. V. den Bosch, A. Furnémont, M. B. Zahid, R. Degreave, L. Breuil, A. Cacciato, A. Rothschild, C. Olsen, U. Ganguly, and J. V. Houdt, "Nitride engineering for improved erase performance and retention of TANOS NAND flash memory," in Proc. IEEE NVSMW/ICMTD, 2008, pp. 128-129.
5. C. Sandhya, A. Oak, N. Chattar, A. Joshi, U. Ganguly, C. Olsen, S. Seutter, L. Date, R. Hung, J. Vasi, and S. Mahapatra, "Impact of SiN composition variation on SANOS memory performance and reliability under NAND (FN/FN) operation," IEEE Trans. Electron Devices, vol. 56, no. 12, pp. 3123-3132, Dec. 2009.
6. D. Gilmer, N. Goel, H. Park, C. Park, S. Verma, G. Bersuker, P. Lysaght, H. Tseng, P. Kirsch, K. Saraswat, and R. Jammy, "Engineering the complete MANOS-type NVM stack for best in class retention performance," in IEDM Tech. Dig., 2009, pp. 439-442.
7. T. H. Kim, I. H. Park, J. D. Lee, H. C. Shin, and B.-G. Park, "Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide- silicon structure at elevated temperatures," Appl. Phys. Lett., vol. 89, no. 6, p. 063 508, Aug. 2006.
8. A. Suhane, A. Arreghini, R. Degraeve, G. van den Bosch, L. Breuil, M. Zahid, M. Jurczak, K. De Meyer, and J. Van Houdt, "Validation of retention modeling as a trap-profiling technique for SiN-based chargetrapping memories," IEEE Electron Device Lett., vol. 31, no. 1, pp. 77-79, Jan. 2010.
9. E. Vianello, E. Nowak, D. Mariolle, N. Chevalier, L. Perniola, G. Molas, J. Colonna, F. Driussi, and L. Selmi, "Direct probing of trapped charge dynamics in SiN by Kelvin force microscopy," in Proc. ICMTS, 2010, pp. 94-97.
10. E. Vianello, F. Driussi, L. Perniola, G. Molas, J.-P. Colonna, B. De Salvo, and L. Selmi, "Explanation of the charge trapping properties of silicon nitride storage layers for NVMs-Part I: Experimental evidences from physical and electrical characterization," IEEE Trans. Electron Devices, DOI:10.1109/TED.2011.2140116.
11. K. Yamaguchi, A. Otake, K. Kobayashi, and K. Shiraishi, "Atomistic guiding principles for MONOS-type memories with high program/erase cycle endurance," in IEDM Tech. Dig., 2009, pp. 275-278.
12. M. Petersen and Y. Roizin, "Density functional theory study of deep traps in silicon nitride memories," Appl. Phys. Lett., vol. 89, no. 5, p. 053 511, Jul. 2006.
13. J. Robertson, "Defects and hydrogen in amorphous silicon nitride," Philos. Mag. B, Phys. Condens. Matter Electron. Opt. Magn. Prop., vol. 69, no. 2, pp. 307-326, 1994.
14. 4 studied using density functional theory calculations," Phys. Rev. B, Condens. Matter, vol. 83, no. 8, p. 085 208, Feb. 2011.
15. A. Arreghini, F. Driussi, E. Vianello, D. Esseni, M. J. van Duuren, D. S. Golubovic, N. Akil, and R. van Schaijk, "Experimental characterization of the vertical position of the trapped charge in Si nitride-based non volatile memory cells," IEEE Trans. Electron Devices, vol. 55, no. 5, pp. 1211-1219, May 2008. (Pubitemid 351689513)
16. E. Vianello, M. Bocquet, F. Driussi, L. Perniola, G. Molas, and L. Selmi, "Program efficiency and high temperature retention of SiN/high-K based memories," Microelectron. Eng., vol. 86, no. 7-9, pp. 1830-1833, Jul.-Sep. 2009.
17. 4," Phys. Rev. B, Condens. Matter, vol. 80, no. 14, p. 144 201, Oct. 2009.
18. 4 thin films," Appl. Phys. Lett., vol. 96, no. 6, p. 062 902, Feb. 2010.
19. P. Kroll, "Structure and reactivity of amorphous silicon nitride investigated with density-functional methods," J. Non-Cryst. Solids, vol. 293-295, pp. 238-243, Nov. 2001. (Pubitemid 32997856)
20. C.-M. Wang, X. Pan, M. Rühle, F. L. Riley, and M. Mitomo, "Silicon nitride crystal structure and observations of lattice defects," J. Mater. Sci., vol. 31, no. 20, pp. 5281-5298, Oct. 1996. (Pubitemid 126709861)
21. 4 with generalized gradient approximation and local density approximation," Int. J. Mod. Phys. B, vol. 22, no. 13, pp. 2157-2167, 2008.
22. z alloys: A quantitative bonding analysis," Phys. Rev. B, Condens. Matter, vol. 38, no. 12, pp. 8171-8184, Oct. 1988.
23. S. Hao, B. Delley, and C. Stampfl, "Structure and properties of TiN(111) interfaces in superhard nanocomposites: First-principles investigations," Phys. Rev. B, Condens. Matter, vol. 74, no. 3, p. 035 402, 2006.
24. D. Sánchez-Portal, P. Ordejón, E. Artacho, and J. Soler, "Densityfunctional method for very large systems with LCAO basis sets," Int. J. Quantum Chem., vol. 65, no. 5, pp. 453-461, 1997. (Pubitemid 127616617)
25. E. Vianello, "Characterization and modelling of silicon-nitride based non volatile memories," Ph.D. dissertation, Univ. Udine, Udine, Italy, 2010.
26. E. Vianello, P. Blaise, F. Driussi, and L. Selmi, "Electronic structure of defects for a chemically grown silicon nitride: Hydrogen effect, and stressinduced structural disorder," Phys. Rev. B, Condens. Matter, submitted for publication.
27. A. Iqbal, W. B. Jackson, C. C. Tsai, J. W. Allen, and C. W. Bates, "Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offset by electron spectroscopy," J. Appl. Phys., vol. 61, no. 8, pp. 2947-2954, Apr. 1987.
28. 4 films on Si," Appl. Phys. Lett., vol. 27, no. 4, pp. 254-255, Aug. 1975.
29. M. Olivier, F. Martin, A. Chabli, G. Lefeuvre, F. Conne, and N. Rochat, "Infrared study of hydrogen in ultra-thin silicon nitride films using multiple internal reflection spectroscopy (MIR) in 200 nm silicon wafers," Phys. Stat. Sol. (A), vol. 175, no. 1, pp. 137-143, Sep. 1999.
30. F. Habraken, "Characterization of LPCVD and PCVD silicon oxynitride films," Appl. Surf. Sci., vol. 30, pp. 186-196, 1987. (Pubitemid 18538425)
31. Z. Yin and F. Smith, "Free-energy model for bonding in amorphous covalent alloys," Phys. Rev. B, Condens. Matter, vol. 43, no. 5, pp. 4507-4510, Feb. 1991.
32. S. E. Curry, P.M. Lenahan, D. T. Krick, J. Kanicki, and C. Kirk, "Evidence for negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films," Appl. Phys. Lett., vol. 56, no. 14, pp. 1359-1361, Apr. 1990.
33. W. L. Warren, J. Kanicki, J. Robertson, E. H. Poindexter, and P. J. McWhorter, "Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films," J. Appl. Phys., vol. 74, no. 6, pp. 4034-4046, Sep. 1993.
34. Y. Kamigaki, S. Minami, and H. Kato, "A new portrayal of electron and hole traps in amorphous silicon nitride," J. Appl. Phys., vol. 68, no. 5, pp. 2211-2215, Sep. 1990.
35. 4 thin films," Electron. Commun. Jpn., vol. 78, no. 4, p. 101, 1995.
36. D. Jousse, J. Kanicki, and J. H. Stathis, "Observation of multiple silicon dangling bond configurations in silicon nitride," Appl. Phys. Lett., vol. 54, no. 11, pp. 1043-1045, Mar. 1989.
37. V. Gritsenko, A. Milov, M. Efremov, V. Volodin, H. Wong, N. Pazdnikov, and K. Zhuravlev, "Silicon nanocluster in silicon nitride: Photoluminescence, Raman scattering and ESR studies," in Proc. IEEE Optoelectron. Microelectron. Mater. Devices, 1996, pp. 196-199.
38. J. Weil and J. Bolton, Electron Paramagnetic Resonance: Elementary Theory and Practical Applications. NewYork:Wiley-Interscience, 2001.
39. C. G. Van de Walle and J. Neugebauer, "First-principles calculations for defects and impurities: Applications to III-nitrides," Appl. Phys. Rev., vol. 95, no. 8, pp. 3851-3879, 2004.
40. S. Fujita and A. Sasaki, "Dangling bonds in memory-quality silicon nitride films," J. Electrochem. Soc., vol. 132, no. 2, pp. 398-402, Feb. 1985. (Pubitemid 15464796)
41. 4," Phys. Rev. B, Condens. Matter, vol. 61, no. 22, pp. 15 005-15 010, Jun. 2000.
42. S. Zhang and J. Northrup, "Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion," Phys. Rev. Lett., vol. 67, no. 17, pp. 2339-2342, Oct. 1991.
43. E. Vianello, E. Nowak, L. Perniola, F. Driussi, P. Blaise, G. Molas, B. D. Salvo, and L. Selmi, "A consistent explanation of the role of the SiN composition on the program/retention characteristics of MANOS and NROM like memories," in Proc. IMW, 2010, pp. 106-109.
44. X. Gonze, J.-M. Beuken, R. Caracas, F. Detraux, M. Fuchs, G.-M. Rignanese, L. Sindic, M. Verstraete, G. Zerah, F. Jollet, M. Torrent, A. Roy, M. Mikami, P. Ghosez, J.-Y. Raty, and D. Allan, "First-principles computation of material properties: The ABINIT software project," Comput. Mater. Sci., vol. 25, no. 3, pp. 478-492, Nov. 2002. (Pubitemid 35251749)
45. E. Vianello, F. Driussi, P. Palestri, A. Arreghini, D. Esseni, L. Selmi, N. Akil, M. van Duuren, and D. Golubović, "Impact of the charge transport in the conduction band on the retention of Si-nitride based memories," in Proc. IEEE ESSDERC, 2008, pp. 107-110.
46. E. Vianello, F. Driussi, A. Arreghini, P. Palestri, D. Esseni, L. Selmi, N. Akil, M. van Duuren, and D. Golubovic, "Experimental and simulation analysis of program/retention transients in silicon nitride-based NVM cells," IEEE Trans. Electron Devices, vol. 56, no. 9, pp. 1980-1990, Sep. 2009.
47. C. Compagnoni, A. S. Spinelli, and A. L. Lacaita, "Experimental study of data retention in nitride memories by temperature and field acceleration," IEEE Electron Device Lett., vol. 28, no. 7, pp. 628-630, Jul. 2007. (Pubitemid 47040471)
48. Y. Rozin, A. Yankelevich, and Y. Netzer, "Novel techniques for data retention and Leff measurements in two bit microFLASH memory cells," AIP Conf. Proc., vol. 28, no. 7, pp. 628-630, Jan. 2001.
49. 4 films," Solid State Electron., vol. 48, no. 3, pp. 477-482, Mar. 2004.
50. A. Arreghini, N. Akil, F. Driussi, D. Esseni, L. Selmi, and M. J. van Duuren, "Long term charge retention dynamics of SONOS cells," Solid State Electron., vol. 52, no. 9, pp. 1460-1466, Sep. 2008.