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Volumn 31, Issue 1, 2010, Pages 77-79

Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories

Author keywords

Charge profile; Charge trapping (CT); Retention modeling; Si rich; SiN; SiON; TANOS; Trap spectroscopy by charge injection and sensing (TSCIS)

Indexed keywords

CHARGE PROFILE; CHARGE PROFILES; RETENTION MODELING; SI-RICH; TRAP SPECTROSCOPY;

EID: 72949119111     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2035718     Document Type: Article
Times cited : (41)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.