Density functional theory study of deep traps in silicon nitride memories

Applied Physics Letters

Volumn 89, Issue 5, 2006, Pages

  Petersen, Max ^a   Roizin, Yakov ^b  

^a ACCELRYS INC   (United States)

^b TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

MEMORY TRAPS; NEGATIVE CORRELATION ENERGY; PROTONATED VACANCIES; SILICON NITRIDE MEMORIES;

ACTIVATION ENERGY; ELECTRON TRAPS; HYDROGEN; HYDROGEN BONDS; PROBABILITY DENSITY FUNCTION; PROTONS;

SILICON NITRIDE;

EID: 33748465169     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2260829     Document Type: Article

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