Impact of SiN composition variation on SANOS memory performance and reliability under NAND (FN/FN) operation

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 3123-3132

  Sandhya, C ^a   Oak, Apoorva B ^a   Chattar, Nihit ^a   Joshi, Ameya S ^a   Ganguly, Udayan ^b   Olsen, C ^b   Seutter, S M ^b   Date, L ^b   Hung, R ^b   Vasi, Juzer ^a   Mahapatra, Souvik ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Charge trap Flash (CTF); Program erase (P E) window; Retention; SANOS; Silicon nitride (SiN); SONOS

Indexed keywords

CHARGE TRAP; PROGRAM/ERASE; RETENTION; SANOS; SONOS;

CHARGE TRAPPING; ELECTRIC FIELDS; HOLE TRAPS; RELIABILITY; SILICON; STOICHIOMETRY; STRUCTURAL OPTIMIZATION; THERMIONIC EMISSION;

SILICON NITRIDE;

EID: 77954034857     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2033313     Document Type: Article

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