Impact of the charge transport in the conduction band on the retention of Si-Nitride based memories

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 107-110

  Vianello, E ^a   Driussi, F ^a   Palestri, P ^a   Arreghini, A ^a   Esseni, D ^a   Selmi, L ^a   Akil, N ^b   Van Duuren, M ^b   Golubovic D S ^b  

^a UNIVERSITY OF UDINE   (Italy)

^b NXP TSMC Research Center   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CIVIL AVIATION; CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HEAT CONDUCTION; NITRIDES; SILICON; SILICON NITRIDE;

CHARGE TRANSPORTS; GATE STACKS; HIGH TEMPERATURES; IMPROVED MODELS; NON VOLATILES; ONO STACKS; RETENTION DATUMS; SPATIAL CHARGE DISTRIBUTIONS; TRAP DEPTHS; TRAPPED CHARGES; TUNNEL OXIDE];

CHARGE CARRIERS;

EID: 58049085060     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681710     Document Type: Conference Paper

References (14)

1. K. Kim and S. Y. Lee, "Memory Technology in the Future", Microelectronic Engineering, vol. 84, pp. 1976-1981, 2007.
2. K. Prall, "Scaling Non-Volatile Memory Below 30 nm", Proc. ofNVSMW, pp. 5-10, 2007.
3. A. Furnémont et al., "Physical Understanding and Modeling of SANOS Retention in Programmed State", SSE, vol. 52, pp. 577-583, 2008.
4. Y. Wang and M. H. White, "An Analytical Retention Model for SONOS Nonvolatile Memory Devices in the Excess Electron State", SSE, vol. 49, pp. 97-107, 2005.
5. S.-H. Gu et al., "Numerical Simulation of Bottom Oxide Thickness Effect on Charge Retention in SONOS Flash Memory Cells", IEEE TED, vol. 54, n. 1, pp. 90-97, 2007.
6. C. M. Compagnoni et al., "Experimental Study of Data Retention in Nitride Memories by Temperature and Field Acceleration", IEEE EDL, vol. 28, n. 7, pp. 628-630, 2007.
7. A. Arreghini et al., "Characterization and Modeling of long term retention in SONOS Non Volatile Memories", Proc. of the ESSDERC, p. 406, 2007.
8. I. Ay et al., "Steady-State and Transient Photoconductivity in Hydrogeneted Amorphous Silicon Nitride Films", Solar Energy Mat. & Solar Cells, vol. 80, pp. 209-216, 2003.
9. J. Frenkel, "On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors", Phys. Rev., vol. 54, n. 8, pp. 647-648, 1938.
10. D. L. Scharfetter and H. K. Gummel, "Large-Signal Analysis of a Silicon Read Diode Oscillator", IEEE TED, vol. 16, n. 1, pp. 64-77, 1969.
11. K. A. Nasyrov et al., "Charge Transport Mechanism in Metal-Nitride-Oxide-Silicon Structure", IEEE EDL, vol. 23, n. 6, pp. 336-338, 2002.
12. 4 Films", SSE, vol. 48, pp. 477-482, 2004.
13. Y. Rozin et al, "Novel Techniques for Data Retention and Leff Mesurements in Two Bit microFLASH Memory Cells", AIP Proceedings, vol. 550, n. 8, pp. 181-185, 2001.
14. A. Arreghini et al, "Experimental Extraction of the Charge Centroid and of the Charge Type in the P/E Operations of the SONOS Memory Cells", IEDM 2006 Tech. Digest, p. 499-502, 2006.