Experimental study of data retention in nitride memories by temperature and field acceleration

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 628-630

  Monzio Compagnoni, Christian ^a,b   Spinelli, Alessandro S ^a,b   Lacaita, Andrea L ^a,b,c  

^a POLITECNICO DI MILANO   (Italy)

^b IUNET Italian University Nano Electronics Team   (Italy)

^c IFN CNR   (Italy)

Author keywords

Data retention; Nitride memories; Nonvolatile memories; Stress induced leakage current (SILC)

Indexed keywords

DATA RETENTION; NITRIDE MEMORY; NONVOLATILE MEMORY; STRESS-INDUCED LEAKAGE CURRENT;

LEAKAGE CURRENTS; NITRIDES; NONVOLATILE STORAGE; STRESSES;

DATA STORAGE EQUIPMENT;

EID: 34447258411     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.898487     Document Type: Article

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