First-principles investigations of the dielectric properties of crystalline and amorphous Si3 N4 thin films

Applied Physics Letters

Volumn 96, Issue 6, 2010, Pages

  Pham, T Anh ^a   Li, Tianshu ^a   Shankar, Sadasivan ^b   Gygi, Francois ^a,c   Galli, Giulia ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INTEL CORPORATION   (United States)

^c University of California Davis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; CRYSTALLINE FILMS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DIELECTRIC CONSTANTS; FIRST-PRINCIPLES INVESTIGATIONS; OPTICAL DIELECTRIC CONSTANT; SILICON NITRIDE THIN FILMS;

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; DENSITY FUNCTIONAL THEORY; PERMITTIVITY; SILICON NITRIDE; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76749098980     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3303987     Document Type: Article

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