Experimental characterization of the vertical position of the trapped charge in si nitride-based nonvolatile memory cells

IEEE Transactions on Electron Devices

Volumn 55, Issue 5, 2008, Pages 1211-1219

  Arreghini, Antonio ^a   Driussi, Francesco ^a   Vianello, Elisa ^a   Esseni, David ^a   van Duuren, Michiel J ^b   Golubovic, Dusan S ^b   Akil, Nader ^b   van Schaijk, Rob ^b  

^a UNIVERSITY OF UDINE   (Italy)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Carrier separation; Charge centroid; Silicon nitride; Silicon oxide nitride oxide semiconductor (SONOS)

Indexed keywords

CHARGE TRAPPING; ELECTRON TUNNELING; NITRIC OXIDE; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

CARRIER SEPARATION; CHARGE CENTROID; NONVOLATILE MEMORY CELLS; SILICON-OXIDE-NITRIDE-OXIDE-SEMICONDUCTOR (SONOS);

NONVOLATILE STORAGE;

EID: 43749099646     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.919713     Document Type: Article

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