Program efficiency and high temperature retention of SiN/high-K based memories

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1830-1833

  Vianello, E ^a,b   Bocquet, M ^b   Driussi, F ^a   Perniola, L ^b   Molas, G ^b   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b CEA LETI   (France)

Author keywords

Modeling; Program efficiency; SANOS TANOS memories

Indexed keywords

CHARGE LOSS; DRIFT DIFFUSION TRANSPORT; EXPERIMENTAL CURVES; GATE STACKS; HIGH TEMPERATURE; INTERPRETATION OF DATA; MEMORY CELL; MODELING; MODELING RESULTS; PHYSICS-BASED MODELS; PROGRAM EFFICIENCY; SANOS/TANOS MEMORIES; SIMULATION STUDIES; THERMAL EMISSIONS;

ELECTRON MOBILITY; NITRIDES;

PROGRAM INTERPRETERS;

EID: 67349197129     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.023     Document Type: Article

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