High-density 3-D interconnect of Cu-Cu contacts with enhanced contact resistance by self-assembled monolayer (SAM) passivation

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2500-2506

  Peng, Lan ^a,b   Li, Hongyu ^b   Lim, Dau Fatt ^a   Gao, Shan ^b   Tan, Chuan Seng ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Cu Cu bonding; self assembled monolayer (SAM); three dimensional integrated circuit (3 D IC)

Indexed keywords

3-D INTEGRATION; CU DAMASCENE; CU-CU BONDING; HIGH-DENSITY; KELVIN STRUCTURES; MOORE'S LAW; THERMAL STRESSING; THERMO COMPRESSION BONDING; THREE DIMENSIONAL INTEGRATED CIRCUITS; WAFER LEVEL;

CONTACT RESISTANCE; INTEGRATED CIRCUITS; INTEGRATION; OHMIC CONTACTS; PARAFFINS; PASSIVATION; SELF ASSEMBLED MONOLAYERS; THREE DIMENSIONAL;

WAFER BONDING;

EID: 79960847498     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2156415     Document Type: Article

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