Morphology and Bond Strength of Copper Wafer Bonding

Electrochemical and Solid-State Letters

Volumn 7, Issue 1, 2004, Pages

  Chen, K N ^a   Tan, C S ^a   Fan, A ^a   Reif, R ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOND STRENGTH (CHEMICAL); COPPER; DEPOSITION; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; NITROGEN; TRANSMISSION ELECTRON MICROSCOPY;

BONDING QUALITY; INTERFACIAL BONDING;

WSI CIRCUITS;

EID: 0942299515     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1626994     Document Type: Article

References (6)

1. K. Banerjee, S. J. Souri, P. Kapur, and K. C. Saraswat, Proc. IEEE, 89, 602 (2001).
2. J. A. Davis, R. Venkatesan, A. Kaloveros, M. Bylansky, S. J. Souri, K. Banerjee, K. C. Saraswat, A. Rahman, R. Reif, and J. D. Meindl, Proc. IEEE, 89, 305 (2001).
3. A. Fan, A. Rahman, and R. Reif, Electrochem. Solid-State Lett., 2, 534 (1999).
4. K. N. Chen, A. Fan, and R. Reif, J. Electron. Mater., 30, 331 (2001).
5. K. N. Chen, A. Fan, C. S. Tan, R. Reif, and C. Y. Wen, Appl. Phys. Lett., 81, 3774 (2002).
6. K. N. Chen, A. Fan, C. S. Tan, and R. Reif, Paper presented at the TMS Annual Meeting, San Diego, CA, March 2-6, 2003.