High density bump-less Cu-Cu bonding with enhanced quality achieved by pre-bonding temporary passivation for 3D wafer stacking

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2011, Pages 46-47

  Peng, L ^a,b   Li, H Y ^b   Lim, D F ^a   Lo, G Q ^a   Kwong, D L ^a   Tan, C S ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

3D IC; Cu Cu bonding; face to face; self assembled monolayer; wafer on wafer

Indexed keywords

3D IC; CU-CU BONDING; FACE-TO-FACE; HIGH DENSITY; IN-SITU; MOORE LAW; SPECIFIC CONTACT RESISTANCES; WAFER STACKING; WAFER-LEVEL 3D INTEGRATION; WAFER-ON-WAFER;

DESORPTION; PASSIVATION; SELF ASSEMBLED MONOLAYERS; SHEAR STRENGTH; THREE DIMENSIONAL;

WAFER BONDING;

EID: 79959995568     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2011.5872226     Document Type: Conference Paper

References (4)

1. C. S. Tan, et al, Wafer Level 3-D ICs Process Technology, Springer, pp. 1-11, 2008.
2. C. S. Tan, et al, Electrochem.Solid-State Lett., 8(6), G147, 2005.
3. D. F. Lim, et al, Advanced Metallization Conference, 2009.
4. C. S. Tan, et al, APL, 95(19), 2009.