Copper direct bonding: An innovative 3D interconnect

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 878-883

  Gueguen, Pierric ^a   Di Cioccio, Léa ^a   Morfouli, Panagiota ^b   Zussy, Marc ^a   Dechamp, Jérome ^a   Bally, Laurent ^a   Claveliera, Laurent ^a  

^a CEA GRENOBLE   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3D INTERCONNECT; 3D TECHNOLOGY; AMBIENT AIR; BONDING QUALITY; COPPER DIRECT BONDING; ELECTRICAL CHARACTERIZATION; KELVIN STRUCTURES; MICRO-ELECTRONIC DEVICES; MULTIPLE CONTACTS; PATTERNED SURFACE; POST-BONDING ANNEALING; ROOM TEMPERATURE; SPECIFIC CONTACT RESISTANCES; VERTICAL INTERCONNECTIONS;

ATMOSPHERIC PRESSURE; MICROELECTRONICS; THREE DIMENSIONAL;

WAFER BONDING;

EID: 77955182896     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490697     Document Type: Conference Paper

References (16)

1. B. Aspar, E. Jalaguier, A. Mas et al. Electron.Lett 35,12 (1999) "Smart-Cut(R) process using metallic bonding: Application to transfer of Si, GaAs, InP thin films".
2. Di-Cioccio-L; Jalaguier-E; Letertre-F, "III-V layer transfer onto silicon and applications" Physica-Status-Solidi-A. March 2005; 202(4): 509-15, Wiley-VCH.
3. L. Di Cioccio, P. Gueguen et al, "3D Technologies at CEALeti Minatec", IMAPS proc. (2008).
4. P. Leduc, L. Di Cioccio et al, "Enabling technologies for 3D chip stacking", VLSI (2008).
5. P. Gueguen, L. Di Cioccio et al, "Copper Direct-Bonding Characterization and Its Interests for 3D Integration", Journal of the Electrochemical Society, 156(10) H772-H776 (2009).
6. P. Gueguen, L. Di Cioccio et al, "3D Vertical Interconnects by Copper Direct Bonding", Mater. Res. Soc. Symp. Proc. Vol. 1112, 2009, p81 (2008).
7. L. Di Cioccio, P. Gueguen et al, "Enabling 3D Interconnects with Metal Direct Bonding", IEEE IITC Conf 2009, proc.(2009).
8. P. Gueguen, C. Ventosa, L. Di Cioccio et al, "Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration", Journal of Microelectronics Engineering, 87 477-484 (2010).
9. N. Sillon, A. Astier, H. Boutry et al, "Enabling technologies for 3D integration: from packaging miniaturization to advanced stacked ICs", Proceeding of IEDM 08, pp. 1-4, (2008).
10. W.P.Maszara et al, J. Appl. Phys. 64 (10), 4943-4950. (1988).
11. R. Tadepalli, K. T. Turner, C. V. Thompson, "Mixed-mode interface toughness of wafer-level Cu-Cu bonds unsing asymmetric chevron test", J. Mech. Phys. Solids, (2007).
12. P. Gueguen, L. Di Cioccio et al, "Physics of Direct Metal Bonding: Applications to 3D Integration", Wafer Bond' porc. (2009).
13. D. L. Cocke, G. K. Chuah et al, "Copper oxidation and surface copper oxide stability investigated by pulsed field desorption mass spectrometry", Ap. Surf. Scien.84; 153-161 (1995).
14. K. Diest, M. J. Archer et al, "Silver diffusion bonding and layer transfer of lithium niobate to silicon", Ap. Phys. Let. 93, 092906 (2008).
15. VVR Narashimha Rao et al, "Electrical resistivity, TCR and thermoelectric power of annealed thin copper films", J. Phys. D: Appl., Phys., Vol 9 (1976).
16. R. Taibi, L. Di Cioccio et al, "Full characterization of Cu/Cu Direct bonding for 3D integration", ECTC, to appear (2010).